4N 4N5 5N High Purity Wafer Indium Gallium Sulfate Aluminum Hydroxide Foil Barren Indium

Product Detail

Package:vacuum packagingIn (minutes):99.995%
deliver goods:Express/air/sea/according to customer requirementspayment terms:Western Union, L/C, D/P, D/A, T/T, MoneyGram
place of origin; place of origin:Guangdong, Chinamodel:4N5 indium poor
Alloy or not:UnalloyedSupply capacity:25 tons per month
application:industrycustom made:yes
brand:OEM/Design and ManufacturingMiddle school or not:non-secondary school
port:Shenzhen, Chinaaspect:4N5
color:silver grayproduct name:barren indium
After sales:Reply within 24 hoursPackage preview:
grade:4N5 (99.995%)Packaging Details:4N 4N5 5N High-purity Wafer Indium Gallium Sulfate Aluminum Hydroxide Foil Inbarium Vacuum Packaging, Fumigation Free Wooden Box, or according to customer requirements
chemical composition:exist
Product Description
4N 4N5 5N High Purity Wafer Indium Gallium Sulfate Aluminum Hydroxide Foil Barren Indium
Specification
Features:
Melting point: 156.76°C
Boiling point: 2073°C
Density: 7.31
Relative Molecular Mass:114.818

application:
Semiconductor industry technology and radio electronics, as well as the ability to adhere to a variety of materials
Impurity content:
Gu
CD
tin
Al
titanium
≤0.0005
≤0.0005
≤0.0005
≤0.0005
≤0.0005
zinc
iron
lead
as

≤0.0005
≤0.0005
≤0.0005
≤0.0005

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