Economical customized monocrystalline silicon ingot with low price 9N purity silicon ingot
- $120.00 / >=10 kilograms
- 10 kilograms
- Wuxi Pango Semiconductor Technology Co., Ltd.
- Jiangsu, China
- Mr James
Product Detail
Types of: | Part Number | grade: | 9N (99.9999999%) |
Package preview: | Dopant: | Boron/As/Phosphorus | |
payment terms: | L/C, T/T | model: | PG-21 |
place of origin; place of origin: | Jiangsu, China |
Product Description
PGO Tech offers silicon ingots ranging in diameter from 76mm to 450mm, as well as custom diameters upon special request. Suitable for a wide range of applications. Such as silicon electrode/silicon ring/silicon target/silicon boat/silicon wafer and optical industry. At the request of customers, we use CZ and MCZ (Magnetic field applied Czochralski) technology to grow crystal ingots and apply strong magnetic fields. PGO TECH is able to meet customer requirements in the single crystal ingot manufacturing stage. Improving the efficiency of devices based on single crystal silicon ingots can provide broader options for the development of the semiconductor and optical industries. Growing high resistivity ingots is our forte. This way we have 60-80 ohm.cm ingots. You can find any resistivity ingot from our stock. The purity of silicon ingot is very important to us, PGO TECH standard purity specification is above 9N pure (99.9999999%), suitable for all the most developed semiconductor applications. In any case, clarity of customer requirements is the most effective guarantee for delivery of the correct material. In addition, we offer monocrystalline and polycrystalline silicon ingots in various shapes. PGO TECH has a large inventory of semiconductor ingots in P<100>, N<100>, P<111> and N<111> types and orientations. Below are some samples of silicon ingots we currently stock.
Types of | dopant | diameter (mm) | Resistivity (ohm.cm) | ||
P | boron | 100-450 | 0.0006-200 | ||
no | phosphorus | 100-450 | 0.0011-60 | ||
no | arsenic | 100-450 | 0.002-0.01 | ||
no | antimony | 100-450 | 0.007-0.025 | ||
application | Polished silicon wafer/silicon ring/silicon electrode/optical ingot/ |
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