China factory high quality 200mm silicon ingot 8 inch single crystal ingot

Product Detail

Resistivity:0.0001-120 ohm.cmmodel:PG-28
payment terms:letter of credit, wire transferIngot processing technology:CZ and MCZ
type:article numberMaterial:High-purity polysilicon material
Packaging Preview:density:2.33g/cm3
place of origin; place of origin:Jiangsu, Chinapurity:≥9N
Adulterants:Boron/Arsenic/Phosphorusapplication:Grade Polished Silicon Wafer/Optical Lens/Mirror Lens/Oxide Film
grade:9N (99.9999999%)
Product Description
Silicon ingots are a key component in the semiconductor and optical industries. PGO TECH offers a variety of standard 200mm ingot options, also known as 8" Ingot/8" Ingot, for a wide range of applications. PGO TECH has a large inventory of 200 mm silicon wafers in P<100>, N<100>, P<111> and N<111> types and orientations. Below is a sample of some of the silicon ingots we currently have in stock. In addition, we are committed to meeting customers' special specifications or standard requirements.
General Specifications
diameter
type
dopant
direction
Resistivity (ohm-cm)
200mm
article number
Boron/Phosphorus/Arsenic
<100>/<111>
0.0006-200
Sample Specifications
diameter
type
dopant
direction
Resistivity (ohm-cm)
200mm
phosphorus
boron
<100>
6-18
200mm
phosphorus
antimony
<100>
0.01-0.02
200mm
phosphorus
boron
<100>
1-5
200mm
phosphorus
boron
<111>
0.001-0.005
200mm
phosphorus
boron
<100>
1-50
200mm
phosphorus
boron
<100>
3-12
200mm
n
phosphorus
<100>
1-10
200mm
phosphorus
boron
<111>
0.001-1
CZ method
Generally speaking, this is the most widely used method in the processing of long crystal ingots. Since the molten silicon raw material is kept in a quartz crucible, the dissolution of oxygen in the quartz glass (SiO2) is unavoidable; as a result, the method keeps the oxygen content normal.
MCZ method research
In the MCZ method, two magnetic fields facing each other are called converging magnetic fields. The tip magnetic fields used for analysis are external magnetic field, surface magnetic field and internal magnetic field. In addition, the analysis was performed using a direct magnetic field. Our analytical results are compared with Watanabe's experimental results. The calculation results of velocity field, temperature field and electromagnetic field are checked and compared. Each case was further examined centered on the degree of agitation, axis symmetry and flow stability.
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