Recrystallized silicon carbide plate kiln frame

Product Detail

Thermal expansion a @20-1000 degrees:5.0port:Tianjin
Processing services:formingSilicon carbide content (%):98.5%
technology:German capitalSupply capacity:10000 kg per month
model:custom madeCrO content (%):0
CaO content (%):0shape:plate
Silica content (%):0payment terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Al2O3 content (%):0MgO content (%):0
Bending strength (1100 degrees):100-120Mpaproduct name:Recrystallized silicon carbide plate rsic plate high-purity sic
Sintering temperature:2400°CThermal Conductivity:26W/Mg
brand:FCTRefractoriness (degrees):Ordinary (1580°
Packaging Details:Export packing-wooden case/pallet/customizedKey words:Recrystallized silicon carbide plate
density:2.65 g/cm3Package preview:
Material:Silicon carbide (SiC)Operating temperature:1200-1650℃
raw material:Imported from Saint-GobainOrigin:China

 

 

index

RSIC

NSIC

Shanghai International Information Center

Silicon Nitride Silicon Carbide

Bulk density (g/cm3)

2.60-2.74

2.75-2.82

>3.02

2.68

Porosity(%)

15

10-12

<0.1

<16

Compressive strength (MPa)

≥600

600-700

 

180

Bending strength (MPa)

90-100(20OC)

 

250(20OC)

≥45(20OC)

100-120(1100OC)

160-180(1100OC)

280(1200OC)

≥50(1200℃)

Young's modulus (GPa)

280(20OC)

220-260

 

≥16(1200℃)

Thermal conductivity (W/MK)

26(1200OC)

15(1200OC)

45(1200OC)

 

Thermal expansion (20-1000 oC) 10-6k-1

4.8

5.0

4.5

≤4.7×10-6

maximum. Working temperature (oC)

1650

1500

1380

1500

Acid and alkali resistance

1-14

 

Excellent

 

Mohs coefficient of thermal expansion

 

 

13

 

Silicon nitride (%)

0

20-40

 

≥22

a-SIC(%)

98.5

60-80

 

≥75

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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